Prof. Dr. Edward Yi Chang
408, Microelectron and Information Research Center,
Dept. Materials Science and Engineering,
National Chiao Tung University, Hsin Chu, Taiwan, ROC
Office Number: 408, Microelectron and Information Research Center
Phone : +886-3-5131536
Fax : +886-3-5751826
Biography
Prof. Dr. Edward
Y. Chang received his B.S. degree from Materials Science and
Engineering, National Tsing Hua University, Hsinchu, Taiwan in 1977, and
his Ph.D. degree from Materials Science and Engineering, University of Minnesota Minneapolis, MN in 1985.
Dr. Chang was with Unisys Corporation GaAs Component
Group, Eagan, MN, 1985 to 1988 and Comsat Labs Microelectronic Group
from 1988 to 1992. He worked on the GaAs MMIC programs on both groups.
He joined National Chiao Tung University (NCTU), Hsinchu, Taiwan, in
1992. In 1994, he helped set up the first GaAs MMIC production line in
Taiwan, and become president of Hexawave Inc., Hsinchu, Taiwan, in 1995.
He returned to the teaching position at NCTU in 1999. Dr. Chang is
currently the Dean of Research and Development and professor of the
Department of Materials Science and Engineering and Dept of Elecrical
Engineering at NCTU. He is also the director of Diamond Lab and the
director of NCTU-TSMC research center.
His research
interests include new device and process technologies for Compound
Semiconductors for wireless communication and high power electronic
applications.. Dr. Chang is a senior member and a DL(Distinguished
Lecturer) of the IEEE Electronic Device Society. Currently his research
activities include InP, GaAs based compound materials and devices (HEMT,
HBT) for wireless communication and sub-milimeterwave imaging
applications. GaN based materials (MBE, MOCVD) and High
frequency&High power electronic (HEMT) applications. III-V/ Si
integration (Ge, SiGe, GaAs, InP) for logic applications. Advanced
package (Flip chip) for high frequency and power applications.
Dr. Chang has received quite a few honors from Taiwan
and abroad, including two times Outstanding. Research Award and
Distinguished Contribution for Technical Transfer to Industry, both from
National Science Council, Taiwan. National Award for Academic
Contribution to Industry and Industry and Economy Contribution Award,
both from Ministry of Economic Affairs, Taiwan. Distinguished Electrical
Engineering Professor Award from Chinese Institute of Electrical
Engineering. He is also Distinguished Lecturer of IEEE, Fellow of
Taiwanese Materials Society, and Fellow of IEEE.
Abstract
Title : III-V nano Devices for Communication and Terahertz Imaging Aplications
60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure (250 nm) have been fabricated and characterized. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS 0.5 V. The results indicate that the InAs HEMT devices have good potential for future ultra-high speed and high frequency device applications, which is essential for high frequency communication. Besides, the high speed InAs HEMT devices can also be used in generating and detecting radiations in terahertz frequency range, a technology which is currently not available using electronic devices. Hence, the InAs devices will fill up the ‘terahertz gap’ in engineering that exist between well-developed microwave technologies and mature optical technologies in infrared wavelength. Most of the materials except water and metal are transparent to the terahertz waves. This enables the development of new imaging techniques for applications such as medical treatment and diagnostic, securing screening, structural analysis and weather forecast. In this work, the fabrication of high performance InAs HEMT device and its characteristics will be presented. Moreover, the potential applications of InAs HEMT will also be explored.
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